Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same

ABSTRACT

Structures including a tensile-stressed silicon arsenic layer, devices including the structures, and methods of forming the devices and structures are disclosed. Exemplary tensile-stressed silicon arsenic layer have an arsenic doping level of greater than 5 E+20 arsenic atoms per cubic centimeter. The structures can be used to form metal oxide semiconductor devices.

CROSS REFERENCE TO RELATED APPLICATION

This application is a division of and claims priority to U.S.application Ser. No. 14/018,345 entitled “STRUCTURES AND DEVICESINCLUDING A TENSILE-STRESSED SILICON ARSENIC LAYER AND METHODS OFFORMING SAME,” filed on Sep. 4, 2013, which claims the benefit andpriority of Provisional Application No. 61/705,932, filed on Sep. 26,2012, entitled TENSILE STRESSED SILICON-ARSENIC ALLOYS, the contents ofwhich are hereby incorporated by reference to the extent the contents donot conflict with the present disclosure.

FIELD OF INVENTION

The present disclosure generally relates to semiconductor structures anddevices and to methods of forming the structures and devices. Moreparticularly, the disclosure relates to structures and devices thatinclude a silicon arsenic layer and to methods of forming the structuresand devices.

BACKGROUND OF THE DISCLOSURE

Semiconductor devices may include a tensile-stressed layer for a varietyof reasons. For example, metal oxide semiconductor (MOS) devices mayinclude a tensile-stressed layer, which forms part of a channel regionof the devices. The tensile-stressed layer may exhibit higher carriermobility—compared to a similar, non-stressed layer. As a result, devicesformed with, for example, a tensile-stressed channel layer or region mayexhibit faster switching speeds, better performance, and/or lower powerconsumption.

Many semiconductor devices use silicon as a semiconducting material fora channel region within MOS devices. In these cases, a tensile stress inthe silicon (e.g., a silicon layer) may be created by doping a siliconlayer with carbon atoms, which are smaller and have a smaller latticeconstant than silicon atoms. Because the carbon atoms are smaller thansilicon atoms, when the carbon atoms form part of the substantiallysilicon crystal lattice, the crystal lattice becomes tensile stressed.

Although doping silicon with carbon can create a tensile stress within asilicon lattice, adding carbon to the silicon lattice may reducemobility of a carrier within the lattice structure (e.g., a channelregion of a device). To compensate for the lower carrier mobility, thesilicon may be doped with additional material, such as n-type dopants(e.g., phosphorous, arsenic, or antimony). While, this approach mayprovide a tensile-stressed silicon region, use of carbon doping mayrequire additional processing steps, materials, and equipment to form asuitable tensile-stressed region or layer having desired carriermobility. Accordingly, improved methods of forming tensile-stressedsilicon regions or layers and structures and devices including theregions or layers are desired.

SUMMARY OF THE DISCLOSURE

Various embodiments of the present disclosure relate to structures anddevices including a tensile-stressed silicon region or layer and tomethods of forming the structures and devices. While the ways in whichvarious embodiments of the disclosure address the drawbacks of the priorart structures, devices, and methods are discussed in more detail below,in general, the present disclosure provides methods of forming atensile-stressed silicon layer using an n-type silicon dopant, arsenic,and structures and devices including arsenic-doped silicontensile-stress layers or regions. As set forth in greater detail below,because arsenic acts as an electron donor, desired tensile stress withina silicon layer or region may be obtained without requiring additionalprocessing and/or equipment, as may be used or required when, forexample, carbon is used to create a tensile stress in a silicon layer orregion.

In accordance with exemplary embodiments of the disclosure, a structure,also referred to herein as a film stack, includes a silicon layer (e.g.,part of a substrate) and a tensile-stressed silicon arsenic layer (e.g.,a silicon arsenic alloy) adjacent the silicon layer, wherein aconcentration of arsenic in the silicon arsenic layer is greater than5E+20 arsenic atoms per cubic centimeter. In accordance with variousaspects of these embodiments, the concentration of arsenic in the layerranges from greater than 5E+20 to about 1E+22 or more. In accordancewith further aspects, the concentration of arsenic in the layer isgreater than or equal to 1E+21, greater than or equal to 5E+21 arsenicatoms per cubic centimeter, or greater than or equal to about 1E+22arsenic atoms per cubic centimeter. The relatively high level of arsenicdoping may provide enough stress in the tensile-stressed silicon arseniclayer, such that additional dopants, such as carbon are not required toobtain a desired amount of stress in the layer to, for example, obtaindesired device properties. In accordance with further aspects, thetensile-stressed silicon arsenic layer is epitaxially grown, using, forexample, chemical vapor deposition (CVD) techniques, such as lowpressure CVD (LPCVD), ultra-high vacuum CVD (UHV-CVD), or remote plasmaCVD (RPCVD). In accordance with further aspects, the structure mayinclude a plurality of tensile-stressed silicon arsenic layers.Structures in accordance with these embodiments can be used to formmetal oxide semiconductor (MOS) devices, such as n-channel MOS (NMOS)and complimentary MOS (CMOS) devices, or for a diffusion layer, such as,for example for use in the manufacture of a finFET device.

In accordance with additional embodiments of the disclosure, a method offorming a tensile-stressed silicon arsenic layer includes the steps ofsupporting a substrate comprising silicon in a reactor, wherein asurface of the substrate is exposed to a reaction region within thereactor, supplying a silicon source to the reactor, supplying an arsenicsource to the reactor, and forming the tensile-stressed silicon arseniclayer having a concentration of arsenic of greater than 5 E+20 arsenicatoms/cubic centimeter on the surface. In accordance with variousaspects of these embodiments, a temperature of the reaction region isbetween about 350° C. and 700° C., about 450° C. and 700° C., or about500° C. and 700° C. In accordance with further aspects, a pressurewithin the reaction region is between about 1 and about 760 Torr, orabout 90 to about 300 Torr. Although mentioned as separate steps, thesteps of supplying a silicon source to the reactor and supplying anarsenic source to the reactor may be performed simultaneously. Inaccordance with some exemplary aspects of these embodiments, during thestep of supplying an arsenic source to the reactor, an arsenic source(e.g., arsine) is provided in a diluent, which may be reactive (e.g.,hydrogen) or non-reactive (e.g., nitrogen, argon, helium, or the like).In accordance with yet further exemplary aspects, the tensile-stressedsilicon arsenic layer is epitaxially formed overlying the surface—e.g.,using chemical vapor deposition (CVD) techniques. In accordance with yetfurther aspects of these embodiments, the concentration of arsenic inthe layer ranges from greater than 5E+20 to about 1E+22 or more. Inaccordance with further aspects, the concentration of arsenic in thelayer is greater than or equal to 1E+21, greater than or equal to 5E+21arsenic atoms per cubic centimeter, or greater than or equal to about1E+22 arsenic atoms per cubic centimeter. Methods in accordance withthese embodiments can be used to form structures and devices, such asthe structures and devices described herein.

In accordance with additional embodiments of the disclosure, asemiconductor device, such as a MOS, NMOS, or CMOS device, includes asilicon layer and a tensile-stressed silicon arsenic layer adjacent thesilicon layer. In accordance with various aspects of these embodiments,the device includes a channel including a tensile-stressed siliconarsenic region formed on the silicon layer, the tensile-stressed siliconarsenic region having a concentration of arsenic of greater than 5 E+20arsenic atoms/cubic centimeter, a source and a drain separated from oneanother by the channel, and a gate configured to control current flowthrough the channel. The gate may suitably include a dielectric layerbetween the channel region and a gate electrode. In accordance withvarious aspects of these embodiments, the concentration of arsenic inthe layer ranges from greater than 5E+20 to about 1E+22 or more. Inaccordance with further aspects, the concentration of arsenic in thelayer is greater than or equal to 1E+21, greater than or equal to 5E+21arsenic atoms per cubic centimeter, or greater than or equal to about1E+22 arsenic atoms per cubic centimeter. In accordance with furtheraspects, the tensile-stressed silicon arsenic layer is epitaxiallygrown, using, for example, chemical vapor deposition (CVD) techniques.In accordance with further aspects, the structure may include aplurality of tensile-stressed silicon arsenic layers.

Both the foregoing summary and the following detailed description areexemplary and explanatory only and are not restrictive of the disclosureor the claimed invention.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

A more complete understanding of the embodiments of the presentdisclosure may be derived by referring to the detailed description andclaims when considered in connection with the following illustrativefigures.

FIG. 1 illustrates a relationship between arsenic concentration andperpendicular lattice parameter, and a relationship between arsenicconcentration and equivalent carbon doping level for examples of siliconarsenic alloys formed according to exemplary embodiments of the presentdisclosure.

FIG. 2 illustrates a relationship between arsenic concentration and filmresistivity for examples of silicon arsenic alloys formed according toexemplary embodiments of the present disclosure.

FIG. 3 illustrates an example X-ray diffraction spectrum for a siliconarsenic alloy formed according to an exemplary embodiment of the presentdisclosure.

FIG. 4 illustrates a flow chart illustrating a method of forming asilicon arsenic alloy according to an exemplary embodiment of thepresent disclosure.

FIG. 5 illustrates an example X-ray diffraction spectrum for anexemplary silicon arsenic alloy formed on a silicon substrate accordingto an exemplary embodiment of the present disclosure.

FIG. 6 illustrates a secondary ion mass spectrometry depth profile for afilm stack or structure including a plurality of silicon arsenic alloylayers and a plurality of silicon layers formed according to anexemplary embodiment of the present disclosure.

FIG. 7 illustrates a relationship between resistivity and arsenicconcentration for silicon arsenic alloys formed at differenttemperatures according to exemplary embodiments of the presentdisclosure.

FIG. 8 illustrates a relationship between processing pressure andequivalent carbon doping level and a relationship between processingpressure and film formation rate for exemplary silicon arsenic alloysformed according to exemplary embodiments of the present disclosure.

FIG. 9 illustrates a relationship between a process flow rate for anexemplary arsenic source and an arsenic concentration for siliconarsenic alloys formed according to exemplary embodiments of the presentdisclosure.

FIG. 10 illustrates a structure including a tensile-stressed siliconarsenic layer in accordance with various embodiments of the disclosure.

FIGS. 11-12 illustrate graphical representations of aligned and randomRutherford backscattering spectra for two example samples in accordancewith exemplary embodiments of the present disclosure.

FIG. 13 illustrates an exemplary NMOS gate structure including anexample tensile-stressed silicon arsenic alloy layer formed according toan exemplary embodiment of the present disclosure.

FIG. 14 illustrates an exemplary semiconductor processing tool forforming tensile-stressed silicon arsenic layers on semiconductorsubstrates according to exemplary embodiments of the present disclosure.

It will be appreciated that elements in the figures are illustrated forsimplicity and clarity and have not necessarily been drawn to scale. Forexample, the dimensions of some of the elements in the figures may beexaggerated relative to other elements to help to improve theunderstanding of illustrated embodiments of the present disclosure.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS OF THE DISCLOSURE

The description of exemplary embodiments of methods, structures, anddevices provided below is merely exemplary and is intended for purposesof illustration only; the following description is not intended to limitthe scope of the disclosure or the claims. Moreover, recitation ofmultiple embodiments having stated features is not intended to excludeother embodiments having additional features or other embodimentsincorporating different combinations of the stated features.

The present disclosure generally relates to structures and devices thatinclude a tensile-stressed silicon layer and to methods of forming thestructures and devices. As used herein, a tensile stress refers to astress imparted to a first material having a smaller lattice spacingrelative to a lattice spacing of a second material to which the firstmaterial is bound/adhered. Because the atoms of the first material areheld at a greater distance from one another by spacing of atoms in thesecond material than the lattice spacing of the first material, atoms inthe first material experience a tensile force, e.g., a force that wouldtend to draw the atoms in the first material further away from oneanother. Without wishing to be bound by theory, inducing stress in alattice structure may alter interatomic forces. As set forth in moredetail below, when tensile-stressed materials are used in semiconductordevices (e.g., channel regions within a metal oxide semiconductor (MOS)device), carrier transport through the tensile-stressed material may beincreased. For example, pulling the lattice farther apart, as in atensile-stressed film, may ease passage of carriers through the lattice.In turn, device power consumption and switching speed may be enhancedrelative to similar devices that do not include such tensile-stressedmaterial.

FIG. 10 illustrates a structure 1000, which includes a silicon layer1002 (e.g., a portion of a substrate) and a tensile-stressed layer 1004.As used herein, a “substrate” refers to any material having a surfaceonto which material can be deposited. A substrate may include a bulkmaterial such as silicon (e.g., single crystal silicon which may includedopants) or may include one or more layers overlying the bulk material.Further, the substrate may include various topologies, such as trenches,vias, lines, and the like formed within or on at least a portion of alayer of the substrate. Tensile-stressed layer 1004, in accordance withvarious embodiments of the disclosure, includes a silicon film or regionthat is doped with arsenic at a concentration of greater than 5 E+20arsenic atoms/cubic centimeter, within an acceptable tolerance. Inaccordance with various aspects of these embodiments, the concentrationof arsenic in the layer ranges from greater than 5E+20 to about 1E+22 ormore. In accordance with further aspects, the concentration of arsenicin the layer is greater than or equal to 1E+21, greater than or equal to5E+21 arsenic atoms per cubic centimeter, or greater than or equal toabout 1E+22 arsenic atoms per cubic centimeter.

As set forth in more detail below, layer 1004 may be formed by formingan arsenic-doped silicon film by a suitable chemical vapor deposition(CVD) process, such as an epitaxial CVD process where suitable siliconand arsenic sources react to form a silicon arsenic alloy. Such filmsmay be used for mobility enhancement in MOS devices, such as NMOS andCMOS devices—without including carbon dopants. Eliminating carbondopants may potentially improve electrical performance and may reducedevice processing time, and equipment and materials used to formdevices. Layer 1004 may alternatively be used as a solid-sourcedopant—e.g., for formation of multigate devices, such as FinFETs.

FIG. 1 illustrates a relationship 100 between a perpendicular latticeparameter for examples of silicon arsenic alloys (e.g., layer 1004)formed according to various embodiments of the present disclosure andarsenic concentration for those films. As used herein, the term “alloy”means a crystalline material, wherein at least some of the lattice sitesof a crystalline material are substituted with atoms from a dopant. Inthe case of silicon arsenic alloys, at least some arsenic atoms resideon silicon crystal lattice sites.

The data illustrated in FIG. 1 were obtained using X-ray diffraction(XRD) and secondary ion mass spectrometry (SIMS). As shown inrelationship 100, as arsenic levels increase in the silicon films, theperpendicular lattice parameter becomes smaller. For example, at anarsenic concentration of approximately 1.65 E+21 arsenic atoms/cubiccentimeter (approximately 3.3 atomic percent arsenic), the perpendicularlattice parameter for the silicon arsenic alloy is approximately 5.42 Å.At an arsenic concentration of approximately 9.56 E+21 arsenicatoms/cubic centimeter (approximately 19.12 atomic percent arsenic), theperpendicular lattice parameter for the silicon arsenic alloy isapproximately 5.36 Å, so that the atoms are spaced 0.06 Å closertogether. This decreasing trend in lattice spacing, combined with x-raydiffraction data presented herein, indicates that the silicon arsenicalloy (e.g., layer 1004) exhibits a tensile stress when present on asilicon substrate (e.g., substrate 1002) with a wider lattice parameter.

FIG. 1 also illustrates a relationship 102 between arsenic concentrationand equivalent carbon doping level for exemplary silicon arsenic alloys.In other words, relationship 102 correlates arsenic concentration in thesilicon arsenic alloy with an amount of carbon effective to create anequivalent tensile stress in a carbon-doped silicon film. Thus, it willbe appreciated that the effective atomic percentage of carbon describedherein is believed to be a proxy for an amount of arsenic that iseffective to generate an equivalent film of approximately equal tensilestress.

FIG. 2 illustrates a relationship 200 between arsenic concentration andfilm resistivity for examples of silicon arsenic alloys formed accordingto embodiments of the present disclosure. Initially, relationship 200illustrates a decreasing correspondence between the arsenicconcentration and the resistivity (e.g., the resistivity drops toapproximately 4 E−04 Ohm*cm at an arsenic concentration of approximately9 E+20 arsenic atoms/cubic cm).

Relationship 200 further illustrates that increasing the arsenicconcentration beyond approximately 9 E+20 arsenic atoms/cubic cm causesthe resistivity to increase. In some embodiments, this increase maybegin at approximately 2-3 E+21 arsenic atoms/cubic cm. Without wishingto be bound by theory, this increase in resistivity may be attributableto such causes as alloy scattering and/or degradation of the crystallattice. Though not illustrated in FIG. 2, a minimum resistivity may bereached at approximately 4 E+20 arsenic atoms/cubic cm. Further, thoughalso not shown in FIG. 2, increasing the concentration of arsenic withinthe film may eventually cause the resistivity of the film to stabilizeat approximately 0.3 mOhm*cm. It will be understood that depositionconditions may have an impact on resistivity, thereby allowing processesto be optimized for film performance; for example, decreasing processtemperature generally decreases the resistivity of the film. This isdescribed in more detail below with reference to FIG. 7.

FIG. 3 illustrates an example XRD spectrum 300 for a silicon arsenicalloy formed according to an embodiment of the present disclosure. Thealloy shown in FIG. 3 includes approximately 1.25 E+21 arsenicatoms/cubic centimeter as measured by Rutherford backscatteringspectrometry (RBS), or approximately 2.5 atomic percent arsenic. Thislevel of arsenic doping is believed to exhibit the same level of tensilestress as a silicon film including approximately 0.15 atomic percentcarbon. Spectrum 300 includes a peak 302 at approximately 34.6 omega-20believed to be associated with the silicon substrate and a shoulder peak304 at 34.7 omega-20 believed to be associated with the silicon arsenicalloy and to indicate tensile strain. Thus, it is believed that thearsenic can be doped into the silicon film at a level that is suitableto generate a detectable silicon arsenic alloy.

As noted above, in accordance with exemplary embodiments of thedisclosure, the silicon arsenic alloys described herein may be formedusing chemical vapor deposition (CVD) techniques, such as low pressureCVD (LPCVD), ultra-high vacuum CVD (UHV-CVD), or remote plasma CDV(RPCVD). In accordance with various aspects of these embodiments, asilicon arsenic alloy may be formed by epitaxially depositing thesilicon arsenic alloy on a suitable substrate (e.g., a silicon layer),so that a crystalline film of silicon arsenic alloy is formed over acrystalline substrate. Epitaxially forming the alloy over a suitablesubstrate may provide desirable lattice registration between the alloyand the substrate, so that a tensile stress is imparted by a mismatch inlattice parameters. However, it will be appreciated that any suitablemethod of forming a silicon arsenic alloy having a tensile stress on asuitable substrate may be employed without departing from the scope ofthe present disclosure.

FIG. 4 illustrates a flow chart illustrating a method 400 forepitaxially depositing or forming a silicon arsenic alloy on a siliconsubstrate in accordance with exemplary embodiments of the disclosure. Itwill be appreciated that the processes illustrated in FIG. 4 anddescribed below are provided for discussion purposes and that someprocesses may be omitted, re-ordered, performed simultaneously, orsubstituted without departing from the scope of the present disclosure.

At 402, method 400 includes supporting a substrate in a reactor. Forexample, the substrate may be supported so that a silicon surface, onwhich the silicon arsenic alloy will be formed, is exposed to a reactionregion within the reactor where one or more film formation reactions mayoccur. In some embodiments, supporting the substrate in the reactor mayinclude adjusting one or more reactor conditions, such as temperature,pressure, and/or carrier gas (e.g., Ar, N₂, H₂, or He) flow rate, toconditions suitable for film formation. For example, in someembodiments, a reactor temperature may be adjusted so that a reactionregion formed near an exposed silicon surface of the substrate, or thatthe surface of the substrate itself, is within a range of 500° C.-700°C., or about 350° C.-700° C., or about 450° C.-700° C. and that thereaction region pressure is within range of about 1 to about 760 Torr or90-300 Torr. Further, in some embodiments, carrier (e.g., nitrogen) gasmay be supplied at a flow rate of approximately 10 to 40 standardliters/minute (SLM). However, it will be appreciated that in someembodiments, a different carrier/diluent gas may be employed, adifferent flow rate may be used, or that such gas(es) may be omitted.

At 404, method 400 includes supplying a silicon source to the reactor.Non-limiting examples of suitable silicon sources include silane (SiH₄),dichlorosilane (SiH₂Cl₂), trisilane (Si₃H₈), and disilane (Si₂H₆). Aflowrate of a silicon source may vary according to the precursor sourcesused. For example, in some embodiments, trisilane may be supplied atbetween 110 and 220 mg/minute. Dichlorosilane may be supplied at, forexample, between 100 and 400 sccm.

At 406, method 400 includes supplying an arsenic source to the reactor.One non-limiting example of an arsenic source includes arsine (AsH₃)diluted in a carrier, such as H₂—e.g., a one percent arsine in hydrogensource. For example, arsine may be supplied at between 10 and 2500 sccmwith 20.7 slm hydrogen. A non-reactive diluent gas (e.g., nitrogen)and/or a reactive diluent gas (e.g., hydrogen) may be used to supply thearsenic source to the reactor. A non-reactive diluent gas may exhibitcomparatively less substrate surface site occupation relative toreactive diluent gases. In other words, a non-reactive diluent gas maybe selected in view of transport equilibrium relationships in thereaction system. However, it will be appreciated that one or morereactive diluent gases may be selected/provided in view of otherreaction equilibrium relationships in the reaction system, so thatconcentration of arsenic active species may be managed during the filmformation.

Although illustrated as separate steps, steps 404 and 406 may occursimultaneously, substantially simultaneously, and/or in reverse order.

At 408, method 400 includes reacting the silicon source and the arsenicsource to form a tensile-stressed silicon arsenic alloy having anarsenic concentration of greater than 5 E+20 arsenic atoms/cubiccentimeter, within an acceptable tolerance. In accordance with variousaspects of these embodiments, the concentration of arsenic in the layerranges from greater than 5E+20 to about 1E+22 or more. In accordancewith further aspects, the concentration of arsenic in the layer isgreater than or equal to 1E+21, greater than or equal to 5E+21 arsenicatoms per cubic centimeter, or greater than or equal to about 1E+22arsenic atoms per cubic centimeter. For example, the silicon source andthe arsenic source may react in a reaction region of the reactor so thatthe silicon arsenic alloy is epitaxially formed on a silicon surface ofthe substrate. Various reactions related to film formation may occur inthe gas phase and/or on the surface. Suitable silicon active species andarsenic active species may react directly and/or via suitableintermediates to form the silicon arsenic alloy film. In someembodiments, tensile-stressed silicon arsenic films may be formed having1.0 E+21 arsenic atoms/cubic centimeter. In some embodiments,tensile-stressed silicon arsenic films may be formed having 1.0 E+22arsenic atoms/cubic centimeter.

Reactor conditions during steps 404-408 may be the same or similar tothose described above in connection with step 402. At 410, method 400includes removing the substrate bearing the silicon arsenic alloy filmfrom the reactor.

Method 400 may be used to form a suitable silicon arsenic alloy on anysuitable substrate so as to form an alloy having a tensile stress. FIG.5 illustrates an XRD spectrum 500 for an exemplary silicon arsenic alloyformed according to an exemplary aspect of method 400. As shown inspectrum 500, the silicon arsenic alloy, shown at peak 502, is formed ontop of a silicon substrate, shown at peak 504. The silicon arsenic alloylayer data shown in FIG. 5 was formed at 500° C. and 300 Torr using 220mg/min of trisilane and 1500 sccm of arsine (1% arsine in hydrogen). Thealloy depicted in FIG. 5 has an arsenic concentration of approximately4.3 E+21 arsenic atoms/cubic centimeter, which is believed to beapproximately equivalent to a tensile-stressed silicon film includingabout 1.01 atomic percent carbon. Tensile strain is evidenced by thesilicon arsenic layer peak. It will be noted that the concentration ofarsenic in the sample of FIG. 5 is higher than that of FIG. 3, and thatthe silicon arsenic layer peak of FIG. 5 is more clearly separated fromthe silicon substrate peak than that of FIG. 3, indicating the smallerlattice parameter for the sample with the higher arsenic concentration.

In accordance with various aspects of exemplary embodiments, method 400may be managed to deposit a plurality of silicon arsenic layers. Forexample, FIG. 6 illustrates a SIMS depth profile 600 illustrating anembodiment of a film stack. Depth profile 600 includes a siliconspectrum 602, an arsenic spectrum 604, an oxygen spectrum 606, and acarbon spectrum 608. Depth profile 600 illustrates three discretesilicon arsenic alloy layers, shown as layers 610, which are separatedfrom one another and capped by silicon films, shown as layers 612. Thus,it will be appreciated that sandwich structures of silicon arsenicalloys and silicon films or any other suitable intervening film may beformed in a suitable reactor system (e.g., in-situ, without exposure toair and/or a vacuum break). If employed, such in-situ depositiontechniques may avoid the formation of adventitious oxides that may alterdevice electrical properties.

As mentioned above, various reaction conditions may be altered to adjustproperties of the silicon arsenic alloy. Such conditions may be adjustedat any suitable time before, during, or after film deposition. Forexample, reactor conditions may be adjusted before film deposition toprepare the substrate surface and/or reaction environment fordeposition. Reactor conditions may be adjusted during film deposition toadjust one or more film properties (e.g., to alter film concentration,etc.). Reactor conditions may be adjusted after film deposition topost-treat a deposited film and/or to prepare for deposition of asubsequent layer.

For example, reactor temperature may be varied to alter the resistivityof the deposited silicon arsenic alloy. FIG. 7 illustrates a comparison700 between concentration/resistivity relationships for embodiments ofsilicon arsenic alloys formed at different temperatures using differentsilicon sources. For example, family 702 (triangles) illustratesconcentration/resistivity relationships for alloys formed usingtrisilane at 500° C. In contrast, family 704 (diamonds) illustratesconcentration/resistivity relationships for alloys formed usingdichlorosilane at 700° C. Without wishing to be bound by theory,reducing the film formation temperature may help incorporate arsenicwithin the silicon lattice. It is believed that increased arsenicincorporation may help increase arsenic concentration within the alloyand increase tensile film stress.

As another example, reactor pressure may be varied to alter the stressof the deposited film and/or to vary the growth rate of the depositedfilm. FIG. 8 illustrates a relationship 802 (circles) between reactorpressure and equivalent carbon doping level for embodiments of siliconarsenic alloys. The films shown in FIG. 8 were deposited at the sametemperature, silicon source supply conditions, and arsenic source supplyconditions. As shown in relationship 802, an increase in the reactorpressure corresponds to an increase in the equivalent carbon dopinglevel, which is believed to correspond to an increase in tensile filmstress.

Relationship 804 (squares), shown in FIG. 8, correlates what is believedto be a saturating relationship between reactor pressure and filmdeposition rate. This may indicate a transition from akinetically-dominated reaction regime at pressures below 100 Torr to amass transfer-dominated reaction regime at pressures in excess of 100Torr. Without wishing to be bound by theory, it may be that apressure-dependent mechanism for incorporating arsenic within thelattice operates at least partially independently from the bulk filmformation chemistry in some conditions based upon the apparentmechanistic differences shown in relationships 802 and 804.

As yet another example, arsine flow rate, and thus reactorconcentration, may be varied to adjust arsenic concentration within thesilicon arsenic alloy. For example, FIG. 9 illustrates a relationship900 between arsine flow rate and arsenic concentration for exemplarysilicon arsenic alloys formed according to various embodiments of thepresent disclosure. Relationship 900 illustrates an approximately linearrelationship between arsine flow rate and arsenic concentration withinthe film. It is believed that increasing the availability of arsenicduring the reaction by increasing the flow rate may increase theprobability that arsenic atoms may be incorporated into the lattice atgiven reactor conditions.

Table 1 and 2, below, are tabled of x-ray diffraction, secondary ionmass spectrometry (SIMS), and Rutherford backscattering spectrometry(RBS) data for a plurality of silicon arsenic films according toembodiments of the present disclosure. As can be seen from the x-raydiffraction data and the elemental analysis from the RBS and SIMS data,the separation (“separation degree”) between the silicon and siliconarsenic alloy peaks in the x-ray diffraction pattern increases as afunction of arsenic concentration in the silicon arsenic films,indicating the decrease in the lattice parameter as a function ofincreasing arsenic content. FIGS. 11 and 12 respectively show random(higher peaks) and aligned (lower peaks) RBS spectra for samples 1799Rand 1827 of Table 1.

TABLE 1 SIMS XRD Thick- Eq Run As ness ⊥ lattice Carbon Thickness #at/cm{circumflex over ( )}3 Fraction A A at % A 1799R  5.30E+21 0.11 4335.39 0.98 501 27 9.56E+21 0.19 304 5.36 1.8 85 19 — — 508 5.38 1.24 508 4 1.65E+21 0.03 1098 5.43 0.148 1098  9 3.45E+21 0.07 500 5.41 0.485500 10 6.00E+21 0.12 903 5.39 1.03 903 25 7.33E+21 0.15 889 5.37 1.359889.9 1827  2.00E+21 0.04 700 5.42 0.35 700

TABLE 2 RBS Channeling XRD Run As Si Thickness Chi Substrate LayerSeparation # Fraction Fraction at/cm{circumflex over ( )}2 min QualityDegree Degree Degree 1799R  0.09 0.91 3.00E+17 12 good 34.57054 34.880.312 27 0.2 0.8 1.70E+17 28 Fair 34.56547 35.13 0.562 19 0.13 0.872.40E+17 24 Fair 34.73577 35.12 0.384  4 0.025 0.975 5.00E+17 26 Fair34.60898 34.65 0.037  9 0.055 0.945 2.30E+17 23 Fair 34.59358 34.730.133 10 0.115 0.885 4.00E+17 100 No 34.57999 34.90 0.321 25 0.13 0.874.00E+17 31 Fair 34.75304 35.18 0.426 1827  0.045 0.955 3.50E+17 23 Fair34.702 34.8 0.098

It will be appreciated that the methods described herein may be used toform one or more layers included in a semiconductor device. For example,FIG. 13 schematically illustrates a cross-section of a portion of anexemplary NMOS transistor 1300, including a source 1302, a drain 1304,and a gate 1306 that controls the flow of current in a channel region1307 between source 1302 and drain 1304. Gate 1306 includes a gatedielectric 1308 and a gate electrode 1310. In the illustrated example, aspacer 1312 is formed on the sides of gate 1306 to mask the tips of thesource and drain implants, preventing damage during contact formation.

In the example shown in FIG. 13, a silicon arsenic layer 1314 may beformed on top of a substrate layer 1316 (e.g., a silicon regionincluding well implants). Source 1302 and drain 1304 regions may includeadditional doping of n- or p-type dopants. Forming the silicon arsenicalloy 1314 on top of a silicon film, other suitable film, substrate, orportions thereof, may cause silicon arsenic alloy 1314 to have a tensilestress, as indicated by the arrows shown in FIG. 13.

In accordance with additional exemplary embodiments, the silicon arsenicfilms are formed and the methods of forming such films described hereinuse a suitable semiconductor processing tool, such as cold-wall,hot-susceptor CVD reactors. An exemplary reactor system suitable for usewith the present disclosure is sold by ASM under the name Intrepid™.

FIG. 14 schematically illustrates a top view of an exemplarysemiconductor processing tool 1400, including a plurality ofsemiconductor processing modules 1402. While the depicted embodimentincludes two modules, it will be appreciated that any suitable number ofsemiconductor processing modules may be provided. For example, someprocessing tools may include just one module while other processingtools may include more than two modules.

FIG. 14 also shows load locks 1404 for moving substrates betweenportions of semiconductor processing tool 1400 that exhibit ambientatmospheric pressure conditions and portions of the tool that are atpressures lower than atmospheric conditions. An atmospheric transfermodule 1408, including an atmospheric substrate handling robot 1410,moves substrates between load ports 1406 and load locks 1404, where aportion of the ambient pressure is removed by a vacuum source (notshown) or is restored by backfilling with a suitable gas, depending onwhether substrates are being transferred into or out of the tool.Low-pressure substrate handling robot 1412 moves substrates between loadlocks 1404 and semiconductor processing modules 1402 within low-pressuretransfer module 1414. Substrates may also be moved among thesemiconductor processing modules 1402 within low-pressure transfermodule 1414 using low-pressure substrate handling robot 1412, so thatsequential and/or parallel processing of substrates may be performedwithout exposure to air and/or without a vacuum break.

FIG. 14 also shows a user interface 1420 connected to a system processcontroller 1422. User interface 1420 is adapted to receive user input tosystem process controller 1422. User interface 1420 may optionallyinclude a display subsystem, and suitable user input devices such askeyboards, mice, control pads, and/or touch screens, for example, thatare not shown in FIG. 14.

FIG. 14 shows an embodiment of a system process controller 1422 providedfor controlling semiconductor processing tool 1400. System processcontroller 1422 may operate process module control subsystems, such asgas control subsystems, pressure control subsystems, temperature controlsubsystems, electrical control subsystems, and mechanical controlsubsystems. Such control subsystems may receive various signals providedby sensors, relays, and controllers and make suitable adjustments inresponse.

System process controller 1422 comprises a computing system thatincludes a data-holding subsystem 1424 and a logic subsystem 1426.Data-holding subsystem 1424 may include one or more physical,non-transitory devices configured to hold data and/or instructionsexecutable by logic subsystem 1426 to implement the methods andprocesses described herein. Logic subsystem 1426 may include one or morephysical devices configured to execute one or more instructions storedin data-holding subsystem 1424. Logic subsystem 1426 may include one ormore processors that are configured to execute software instructions.

In some embodiments, such instructions may control the execution ofprocess recipes. Generally, a process recipe includes a sequentialdescription of process parameters used to process a substrate, suchparameters including, but not limited to, time, temperature, pressure,and concentration, as well as various parameters describing electrical,mechanical, and environmental aspects of the tool during substrateprocessing. The instructions may also control the execution of variousmaintenance recipes used during maintenance procedures.

In some embodiments, such instructions may be stored on removablecomputer-readable storage media 1428, which may be used to store and/ortransfer data and/or instructions executable to implement the methodsand processes described herein, excluding a signal per se. It will beappreciated that any suitable removable computer-readable storage media1428 may be employed without departing from the scope of the presentdisclosure. Non-limiting examples include DVDs, CD-ROMs, floppy discs,and flash drives.

It is to be understood that the configurations and/or approachesdescribed herein are exemplary in nature, and that these specificembodiments or examples are not to be considered in a limiting sense,because numerous variations are possible. The specific routines ormethods described herein may represent one or more of any number ofprocessing strategies. Thus, the various acts illustrated may beperformed in the sequence illustrated, in other sequences, or omitted insome cases.

The subject matter of the present disclosure includes all novel andnonobvious combinations and subcombinations of the various processes,systems and configurations, and other features, functions, acts, and/orproperties disclosed herein, as well as any and all equivalents thereof.

1. A structure comprising: a silicon layer; and a tensile-stressedsilicon arsenic layer formed adjacent the silicon layer, thetensile-stressed silicon arsenic layer having an concentration ofarsenic of greater than 5 E+20 arsenic atoms per cubic centimeter. 2.The structure of claim 1, wherein the tensile-stressed silicon arseniclayer is formed using chemical vapor deposition.
 3. The structure ofclaim 1, wherein the tensile-stressed silicon arsenic layer isepitaxially grown overlying the silicon layer.
 4. The structure of claim1, wherein the tensile-stressed silicon arsenic layer is epitaxiallygrown at a pressure between about 90 Torr and about 300 Torr.
 5. Thestructure of claim 1, wherein the tensile-stressed silicon arsenic layeris epitaxially grown at a temperature between 500° C. and 700° C.
 6. Thestructure of claim 1, wherein the structure comprises a plurality oftensile-stressed silicon arsenic layers.
 7. The structure of claim 1,wherein the tensile-stressed silicon arsenic layer does not includeadded carbon atoms.
 8. The structure of claim 1, wherein the structureforms part of an NMOS device.
 9. The structure of claim 1, wherein thestructure forms part of a CMOS device.
 10. The structure of claim 1,wherein the concentration of arsenic is greater than or equal to 1E+21arsenic atoms per cubic centimeter.
 11. The structure of claim 1,wherein the concentration of arsenic is about 1E+22 arsenic atoms percubic centimeter.
 12. The structure of claim 1, wherein theconcentration of arsenic is about 5E+21 arsenic atoms per cubiccentimeter.
 13. The structure of claim 1, wherein the structure formspart of a finFET device.
 14. The structure of claim 1, wherein thetensile-stressed silicon arsenic layer is a diffusion layer.
 15. Asemiconductor device, including: a silicon layer; a channel including atensile-stressed silicon arsenic region formed on the silicon layer, thetensile-stressed silicon arsenic region having a concentration ofarsenic of greater than 5 E+20 arsenic atoms/cubic centimeter; a sourceand a drain separated from one another by the channel; and a gateconfigured to control current flow through the channel.
 16. Thesemiconductor device of claim 15, wherein the device is a CMOS device.17. The semiconductor device of claim 15, wherein tensile-stressedsilicon arsenic region is epitaxially grown at a pressure between about90 Torr and about 300 Torr.
 18. The semiconductor device of claim 15,wherein the tensile-stressed silicon arsenic region is epitaxially grownat a temperature between 500° C. and 700° C.
 19. The semiconductordevice of claim 15, wherein the concentration of arsenic is about 5E+21arsenic atoms per cubic centimeter.
 20. The semiconductor device ofclaim 15, wherein the semiconductor device comprises a finFET device.